IndiumV3, Main, Repository, bibRecord, 00AC12

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Identifieur interne : 00AC12 ( Main/Repository ); précédent : 00AC11; suivant : 00AC13

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Auteurs : RBID : Pascal:05-0081934

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Dépôt chimique phase vapeur, Méthode MOCVD, Microscopie électronique balayage, Microscopie électronique transmission, Méthode VLS, Nanomatériau, Nanofil, Monocristal, Gallium phosphure, Indium phosphure, Composé ternaire, Semiconducteur III-V, GaInP, Ga In P, Substrat InP, 8110B, 8107V.

English descriptors

KwdEn :
- CVD, Crystal growth from vapors, Experimental study, Gallium phosphides, III-V semiconductors, Indium phosphides, MOCVD, Monocrystals, Nanostructured materials, Nanowires, Scanning electron microscopy, Ternary compounds, Transmission electron microscopy, VLS growth.

Abstract

3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N₂ were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the VLS model, is also presented.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00A817

Links to Exploration step

Pascal:05-0081934

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD</title>
<author><name sortKey="Sacilotti, M" uniqKey="Sacilotti M">M. Sacilotti</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Couches Minces et Nanostructures group, 2604, CNRS, Université de Bourgogne</s1>
<s2>Dijon</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Bourgogne</region>
<settlement type="city">Dijon</settlement>
</placeName>
<orgName type="university">Université de Bourgogne</orgName>
<placeName><settlement type="city">Dijon</settlement>
<region type="region" nuts="2">Région Bourgogne</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Decobert, J" uniqKey="Decobert J">J. Decobert</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Alcatel-CIT, Route de Nozay 91460</s1>
<s2>Marcoussis</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<wicri:noRegion>Marcoussis</wicri:noRegion>
<placeName><region type="region" nuts="2">Île-de-France</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sik, H" uniqKey="Sik H">H. Sik</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Alcatel-CIT, Route de Nozay 91460</s1>
<s2>Marcoussis</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<wicri:noRegion>Marcoussis</wicri:noRegion>
<placeName><region type="region" nuts="2">Île-de-France</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Post, G" uniqKey="Post G">G. Post</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Alcatel-CIT, Route de Nozay 91460</s1>
<s2>Marcoussis</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<wicri:noRegion>Marcoussis</wicri:noRegion>
<placeName><region type="region" nuts="2">Île-de-France</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Dumas, C" uniqKey="Dumas C">C. Dumas</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Couches Minces et Nanostructures group, 2604, CNRS, Université de Bourgogne</s1>
<s2>Dijon</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Bourgogne</region>
<settlement type="city">Dijon</settlement>
</placeName>
<orgName type="university">Université de Bourgogne</orgName>
<placeName><settlement type="city">Dijon</settlement>
<region type="region" nuts="2">Région Bourgogne</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Viste, P" uniqKey="Viste P">P. Viste</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Couches Minces et Nanostructures group, 2604, CNRS, Université de Bourgogne</s1>
<s2>Dijon</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Bourgogne</region>
<settlement type="city">Dijon</settlement>
</placeName>
<orgName type="university">Université de Bourgogne</orgName>
<placeName><settlement type="city">Dijon</settlement>
<region type="region" nuts="2">Région Bourgogne</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Patriarche, G" uniqKey="Patriarche G">G. Patriarche</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Laboratoire de Photonique et de Nanostructures, UPR20-CNRS Route de Nozay 91460</s1>
<s2>Marcoussis</s2>
<s3>FRA</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>France</country>
<wicri:noRegion>Marcoussis</wicri:noRegion>
<placeName><region type="region" nuts="2">Île-de-France</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">05-0081934</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 05-0081934 INIST</idno>
<idno type="RBID">Pascal:05-0081934</idno>
<idno type="wicri:Area/Main/Corpus">00A817</idno>
<idno type="wicri:Area/Main/Repository">00AC12</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term>
<term>Crystal growth from vapors</term>
<term>Experimental study</term>
<term>Gallium phosphides</term>
<term>III-V semiconductors</term>
<term>Indium phosphides</term>
<term>MOCVD</term>
<term>Monocrystals</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Scanning electron microscopy</term>
<term>Ternary compounds</term>
<term>Transmission electron microscopy</term>
<term>VLS growth</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Dépôt chimique phase vapeur</term>
<term>Méthode MOCVD</term>
<term>Microscopie électronique balayage</term>
<term>Microscopie électronique transmission</term>
<term>Méthode VLS</term>
<term>Nanomatériau</term>
<term>Nanofil</term>
<term>Monocristal</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Composé ternaire</term>
<term>Semiconducteur III-V</term>
<term>GaInP</term>
<term>Ga In P</term>
<term>Substrat InP</term>
<term>8110B</term>
<term>8107V</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N<sub>2</sub>
 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the VLS model, is also presented.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>272</s2>
</fA05>
<fA06><s2>1-4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>12th International Conference on Metalorganic Vapor Phase Epitaxy</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>SACILOTTI (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DECOBERT (J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SIK (H.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>POST (G.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>DUMAS (C.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>VISTE (P.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>PATRIARCHE (G.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>BIEFELD (R. M.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>STRINGFELLOW (G. B.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Couches Minces et Nanostructures group, 2604, CNRS, Université de Bourgogne</s1>
<s2>Dijon</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Alcatel-CIT, Route de Nozay 91460</s1>
<s2>Marcoussis</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Laboratoire de Photonique et de Nanostructures, UPR20-CNRS Route de Nozay 91460</s1>
<s2>Marcoussis</s2>
<s3>FRA</s3>
<sZ>7 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Sandia National Laboratory</s1>
<s2>Albuquerque, NM</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA15>
<fA20><s1>198-203</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000121240620330</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2005 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>16 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>05-0081934</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N<sub>2</sub>
 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the VLS model, is also presented.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A10B</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07V</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Dépôt chimique phase vapeur</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>CVD</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Méthode VLS</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>VLS growth</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Método VLS</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Monocristal</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Monocrystals</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium phosphure</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium phosphides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>20</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>20</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>21</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>21</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>GaInP</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Ga In P</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8110B</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8107V</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC07>
<fN21><s1>052</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XII International Conference on Metalorganic Vapor Phase Epitaxy</s1>
<s2>12</s2>
<s3>Lahina, Hawaii USA</s3>
<s4>2004-05-30</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00AC12 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00AC12 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:05-0081934
   |texte=   Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri